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CS3N20A4H - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS3N20A4H
Manufacturer CR Micro
File Size 456.20 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3N20A4H Datasheet

Full PDF Text Transcription for CS3N20A4H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS3N20A4H. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET ○R CS3N20 A4H General Description： CS3N20 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology ...

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Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is To-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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